The concept of a simple technique to remove thin layers from otherwise thick, rigid semiconductor crystals has been actively explored for years. In a significant advance, a research group has successfully applied their new ‘controlled spalling’ layer transfer technique to gallium nitride (GaN) crystals, a prevalent semiconductor material, and created a pathway for producing many layers from a single substrate.
from Engineering and Construction News – ScienceDaily https://www.sciencedaily.com/releases/2017/07/170711112418.htm
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