In microelectronic devices, the bandgap is a major factor determining the electrical conductivity of the underlying materials, and a more recent class of semiconductors with ultrawide bandgaps are capable of operating at much higher temperatures and powers than conventional small-bandgap silicon-based chips. Researchers now provide a detailed perspective on the properties, capabilities, current limitations and future developments for one of the most promising UWB compounds, gallium oxide.
from Engineering and Construction News – ScienceDaily https://www.sciencedaily.com/releases/2018/12/181218115159.htm
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