Spinning around: A room temperature field-effect transistor using graphene's electron spin

A graphene-based spin field-effect transistor has been used in an operating at room temperature. Using the spin of the electrons in graphene and other layered material heterostructures the researchers have produced working devices as a step towards integrating spintronic logic and memory devices.

from Engineering and Construction News – ScienceDaily https://www.sciencedaily.com/releases/2017/07/170705123127.htm

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