Straining the memory: Prototype strain engineered materials are the future of data storage

Researchers have strain-engineered a data storage material to store data by exploiting a process of avalanche atomic switching. Memory cells using this material substantially outperform state-of-the-art phase change memory devices.

from Engineering and Construction News – ScienceDaily https://www.sciencedaily.com/releases/2017/09/170920113411.htm

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