Researchers have shown that a wide-bandgap semiconductor called gallium oxide can be engineered into nanometer-scale structures that allow electrons to move much faster within the crystal structure. With electrons that move with such ease, Ga2O3 could be a promising material for applications such as high-frequency communication systems and energy-efficient power electronics.
from Engineering and Construction News – ScienceDaily https://www.sciencedaily.com/releases/2018/04/180424112920.htm
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