Tuesday, 28 November 2017

Significant breakthrough in topological insulator based devices

The realization of room temperature spin-orbit torque driven magnetization switching in topological insulator-ferromagnet heterostructures has promising applications in low power consumption and high integration density memories and logic devices.

from Engineering and Construction News – ScienceDaily https://www.sciencedaily.com/releases/2017/11/171128102915.htm



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