Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes.
from Engineering and Construction News – ScienceDaily https://www.sciencedaily.com/releases/2017/01/170109113756.htm
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