Artificially introduced atomic-level sensors enable measurements of the electric field within a working semiconductor device

A new method for sensing the electric field generated in semiconductor devices during operation has now been developed by researchers. The technique is demonstrated for a diamond device, with nitrogen-vacancy centers acting as local electric-field probes, subject to bias voltages up to 150 volt.

from Engineering and Construction News – ScienceDaily https://www.sciencedaily.com/releases/2017/02/170202090807.htm

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